Reliability of electron devices, failure physics and analysisGROESENEKEN, Guido; MAES, Herman E; MOUTHAAN, Anton J et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, issn 0026-2714, 352 p.Conference Proceedings

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditionsDEGRAEVE, R; ROUSSEL, P; OGIER, J. L et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1651-1654, issn 0026-2714Conference Paper

A new wafer level reliability method for evaluation of ionic induced pMOSFET drift effectsDREIZNER, A; NAGEL, J; SCHARFE, R et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1855-1858, issn 0026-2714Conference Paper

A practical system for hot spot detection using fluorescent microthermal imagingGLACET, J.-Y; BERNE, S.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1811-1814, issn 0026-2714Conference Paper

Comprehensive gate-oxide reliability evaluation for DRAM processesVOLLERSTEN, R. P; ABADEER, W. W.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1631-1638, issn 0026-2714Conference Paper

Enhancement of t_bd of MOS gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regimeMARTIN, A; RIBBROCK, T; O'SULLIVAN, P et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1647-1650, issn 0026-2714Conference Paper

Justifications for reducing HBM and MM ESD qualification test timeVERHAEGE, K; ROBINSON-HAHN, D; RUSS, C et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1715-1718, issn 0026-2714Conference Paper

Reproducibility of field failures by ESD models - comparison of HBM, socketed CDM and non-socketed CDMBRODBECK, T; BAUCH, H; GUGGENMOS, X et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1719-1722, issn 0026-2714Conference Paper

Simulation study for the CDM ESD behaviour of the grounded-gate NMOSRUSS, C; VERHAEGE, K; BOCK, K et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1739-1742, issn 0026-2714Conference Paper

Threshold voltage degradation in plasma-damaged CMOS transistors : Role of electron and hole traps related to charging damageBROZEK, T; CHAN, Y. D; VISWANATHAN, C. R et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1627-1630, issn 0026-2714Conference Paper

Turn-on speed of grounded gate NMOS ESD protection transistorsMENEGHESSO, G; LUCHIES, J. R. M; KUPER, F. G et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1735-1738, issn 0026-2714Conference Paper

Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopyLAWTON, W; BARRETT, J.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1803-1806, issn 0026-2714Conference Paper

Design of a test structure to evaluate electro-thermomigration in power ICsDE MUNARI, I; SPERONI, F; REVERBERI, M et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1875-1878, issn 0026-2714Conference Paper

ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC'sKER, M.-D; YU, T.-L.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1727-1730, issn 0026-2714Conference Paper

Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled techniqueKER, M.-D; WU, C.-N.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1731-1734, issn 0026-2714Conference Paper

Finite element investigations of mechanical stress in metallization structuresWEIDE, K; YU, X; MENHORN, F et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1703-1706, issn 0026-2714Conference Paper

In-situ monitoring of dry corrosion degradation of Au ball bonds to Al bond pads in plastic packages during HTSLRAGAY, F. W; POL, J. A. V. D; NADERMAN, J et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1931-1934, issn 0026-2714Conference Paper

Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults : A characterization case study using atomic force microscopyJACOB, P; HOEPPNER, K.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1783-1786, issn 0026-2714Conference Paper

Reliability improvement of single-poly quasi self-aligned BiCMOS BJTS using base surface arsenic compensationVENDRAME, L; GRAVIER, T; KIRTSCH, J et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1827-1830, issn 0026-2714Conference Paper

Study on the reliability of an InP/InGaAsP integrated laser modulatorHORNUNG, V; LE DU, F; STARCK, C et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1919-1922, issn 0026-2714Conference Paper

The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTsMENOZZI, R; BORGARINO, M; COVA, P et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1899-1902, issn 0026-2714Conference Paper

Wafer level reliability : Process control for reliabilityTURNER, T. E.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1839-1846, issn 0026-2714Conference Paper

A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuitsGLASOW, A. V; KAMMER, H; KOHLHASE, A et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1755-1758, issn 0026-2714Conference Paper

AC effects in IC reliabilityHU, C.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1611-1617, issn 0026-2714Conference Paper

Copper interconnection lines : SARF characterization and lifetime testCIOFI, C; DATTILO, V; NERI, B et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1747-1750, issn 0026-2714Conference Paper